JPH0556314B2 - - Google Patents
Info
- Publication number
- JPH0556314B2 JPH0556314B2 JP16619184A JP16619184A JPH0556314B2 JP H0556314 B2 JPH0556314 B2 JP H0556314B2 JP 16619184 A JP16619184 A JP 16619184A JP 16619184 A JP16619184 A JP 16619184A JP H0556314 B2 JPH0556314 B2 JP H0556314B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor layer
- thermal conductivity
- polycrystalline semiconductor
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 77
- 239000013078 crystal Substances 0.000 claims description 26
- 230000002265 prevention Effects 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 230000017525 heat dissipation Effects 0.000 claims description 4
- 230000002902 bimodal effect Effects 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16619184A JPS6144785A (ja) | 1984-08-08 | 1984-08-08 | 半導体単結晶薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16619184A JPS6144785A (ja) | 1984-08-08 | 1984-08-08 | 半導体単結晶薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6144785A JPS6144785A (ja) | 1986-03-04 |
| JPH0556314B2 true JPH0556314B2 (en]) | 1993-08-19 |
Family
ID=15826773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16619184A Granted JPS6144785A (ja) | 1984-08-08 | 1984-08-08 | 半導体単結晶薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6144785A (en]) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2631121B2 (ja) * | 1988-03-07 | 1997-07-16 | 理化学研究所 | 半導体薄膜のレーザー溶融再結晶化方法 |
| JP2750890B2 (ja) * | 1988-06-28 | 1998-05-13 | 株式会社リコー | 半導体基板の製造方法 |
| JPH0283915A (ja) * | 1988-09-20 | 1990-03-26 | Ricoh Co Ltd | 半導体単結晶薄膜の製造方法 |
| JP2797104B2 (ja) * | 1988-10-21 | 1998-09-17 | 正國 鈴木 | 半導体結晶層の製造方法 |
| US9228727B2 (en) | 2012-04-05 | 2016-01-05 | Michael W. May | Lighting assembly |
| CA3049371A1 (en) | 2016-01-07 | 2017-07-13 | Michael W. May | Connector system for lighting assembly |
| US9726332B1 (en) | 2016-02-09 | 2017-08-08 | Michael W. May | Networked LED lighting system |
-
1984
- 1984-08-08 JP JP16619184A patent/JPS6144785A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6144785A (ja) | 1986-03-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |